Structural and optical properties of pseudomorphic InxGa1−xN alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122272
Reference11 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Optical transitions in InxGa1−xN alloys grown by metalorganic chemical vapor deposition
4. III–V nitride based light-emitting devices
5. Die Konstitution der Mischkristalle und die Raumf�llung der Atome
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