Recombination of Shockley partial dislocations by electron beam irradiation in wurtzite GaN-Reference-Cited by-同舟云学术

Recombination of Shockley partial dislocations by electron beam irradiation in wurtzite GaN

Published:2019-10-28 Issue:16 Volume:126 Page:165702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Belabbas I.¹^ORCID,Vasileiadis I. G.²^ORCID,Moneta J.³^ORCID,Smalc-Koziorowska J.³^ORCID,Dimitrakopulos G. P.²^ORCID

Affiliation:

1. Equipe de Cristallographie et de Simulation des Matériaux, Laboratoire de Physico-Chimie des Matériaux et Catalyse, Faculté des Sciences Exactes, Université de Béjaia, Béjaia 06000, Algeria

2. Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece

3. Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

Funder

General Secretariat for Research and Technology

State Scholarships Foundation

Polish National Science Center

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5121416

Reference68 articles.

1. Group III-nitride lasers: a materials perspective

2. Gallium nitride devices for power electronic applications

3. Band Structure and Quantum Confined Stark Effect in InN/GaN superlattices

4. GaN-based light-emitting diodes on various substrates: a critical review

5. Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition

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