Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN-Reference-Cited by-同舟云学术

Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN

Published:2004-02 Issue:3 Volume:95 Page:1516-1524
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Motayed Abhishek,Jones Kenneth A.,Derenge Michael A.,Wood Mark C.,Zakharov D. N.,Liliental-Weber Z.,Smith David J.,Davydov Albert V.,Anderson Wallace T.,Iliadis Agis A.,Noor Mohammad S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1633660

Reference24 articles.

1. Metal contacts to gallium nitride

2. High transconductance AlGaN/GaN optoelectronic heterostructure field effect transistor

3. Cr/Al and Cr/Al/Ni/Au ohmic contacts to n-type GaN

4. Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1−xN capping layers

5. Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts ton-type GaN

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