Schottky diodes on hydrogen plasma treatedn‐GaAs surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101922
Reference6 articles.
1. Hydrogenation of shallow‐donor levels in GaAs
2. Infrared spectroscopic evidence of silicon related hydrogen complexes in hydrogenatedn‐type GaAs doped with silicon
3. Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposure
4. Creation of deep levels in horizontal Bridgman‐grown GaAs by hydrogenation
5. Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment
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1. Numerical simulation of the process of hydrogenation of GaAs;Semiconductors;2009-01
2. Photo-enhanced reactivation of Si donors deactivated by plasma-induced defects in n-type GaN;physica status solidi (c);2007-06
3. Amorphization of the surface region in epitaxial n-GaAs treated with atomic hydrogen;Semiconductors;2002-07
4. Causes of variation in the static current-voltage characteristics of the structures with the Me/n-n +-GaAs Schottky barrier on hydrogenation;Semiconductors;2002-04
5. Investigation of the penetration of atomic hydrogen from the gas phase into SiO2/GaAs;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-07
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