Photo-enhanced reactivation of Si donors deactivated by plasma-induced defects in n-type GaN-Reference-Cited by-同舟云学术

Photo-enhanced reactivation of Si donors deactivated by plasma-induced defects in n-type GaN

Published:2007-06 Issue:7 Volume:4 Page:2581-2584
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Nakamura Seiji,Ikadai Yuki,Suda Masayuki,Suhara Michihiko,Okumura Tsugunori

Publisher

Wiley

Subject

Condensed Matter Physics

Reference14 articles.

1. ,, and , in: Extended abstracts of The 2006 International Conference on Compound Semiconductor MANufacturing TECHnology (Vancouver, BC, Canada, 2006), p. 273.

2. ,, and , in: Extended abstracts of The 2006 International Conference on Compound Semiconductor MANufacturing TECHnology (Vancouver, BC, Canada, 2006), p. 109.

3. Donor neutralization in GaAs(Si) by atomic hydrogen

4. Photoluminescence study of the shallow donor neutralization in GaAs(Si) by atomic hydrogen

5. Hydrogenation of shallow‐donor levels in GaAs

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