(Na0.5Bi0.5)0.87Pb0.13TiO3 thin films on different substrates for ferroelectric memory applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2811957
Reference28 articles.
1. Td19: Thin films for ferroelectric devices
2. Ferroelectric Memories
3. Enhanced Ferroelectric Properties of Nitrogen-Doped Bi4Ti3O12 Thin Films
4. Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory application
5. Structural, dielectric, and ferroelectric properties of compositionally graded (Pb,La)TiO[sub 3] thin films with conductive LaNiO[sub 3] bottom electrodes
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1. The crystallization and dielectric tunability of Zn doped Na0.5Bi0.5TiO3 thin films;Ceramics International;2016-01
2. Effect of annealing temperature on electrical properties of metal–ferroelectric (BiFeO3)–insulator (Bi2Ti2O7)–silicon capacitors;Microelectronic Engineering;2012-03
3. The influence of crystallization route on the Ce-doped Bi2Ti2O7 thin film by metal organic decomposition;Journal of Alloys and Compounds;2010-04
4. The Ferroelectric and Charge Injection Effects of Metal–Ferroelectric (BiFe[sub 0.95]Mn[sub 0.05]O[sub 3])–Insulator (Bi[sub 2]Ti[sub 2]O[sub 7])–Silicon Capacitors;Electrochemical and Solid-State Letters;2010
5. EFFECT OF Ce-DOPING ON STRUCTURAL AND ELECTRICAL PROPERTIES OF DIELECTRIC Bi2Ti2O7 THIN FILMS;Surface Review and Letters;2008-12
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