Thermal calibration procedure for internal infrared laser deflection apparatus
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2039687
Reference12 articles.
1. Absolute measurement of transient carrier concentration and temperature gradients in power semiconductor devices by internal IR-laser deflection
2. Internal infrared laser deflection system: a tool for power device characterization
3. Temperature dependence of the refractive index in semiconductors
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Irradiance-based emissivity correction in infrared thermography for electronic applications;Review of Scientific Instruments;2011-11
2. Low-cost and versatile thermal test chip for power assemblies assessment and thermometric calibration purposes;Applied Thermal Engineering;2011-07
3. Power-Substrate Static Thermal Characterization Based on a Test Chip;IEEE Transactions on Device and Materials Reliability;2008-12
4. A heterodyne method for the thermal observation of the electrical behavior of high-frequency integrated circuits;Measurement Science and Technology;2008-09-22
5. Steady-state sinusoidal thermal characterization at chip level by internal infrared-laser deflection;Journal of Physics D: Applied Physics;2008-07-18
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