Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1719267
Reference28 articles.
1. Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser Irradiation
2. Explosive crystallization in amorphous Si initiated by long pulse width laser irradiation
3. Transition of a Si-As solution to the amorphous phase induced by pulsed-laser quenching
4. Epitaxial explosive crystallization of amorphous silicon
5. Solidification of highly undercooled liquid silicon produced by pulsed laser melting of ion-implanted amorphous silicon: Time-resolved and microstructural studies
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1. Characterization of probe lasers for thin-film optical measurements;Journal of Russian Laser Research;2010-01
2. Lateral Diffusion of Phosphorous Induced by Excimer Laser Irradiation of Silicon Thin Film for Formation of Gradual Lightly Doped Region in Polycrystalline Silicon Thin Film Transistors;Japanese Journal of Applied Physics;2007-10-09
3. Monitoring explosive crystallization phenomenon of amorphous silicon thin films during short pulse duration XeF excimer laser annealing using real-time optical diagnostic measurements;Thin Solid Films;2006-12
4. In-Situ and Ex-Situ Measurements on Silicon Thin Films Fabricated by Excimer Laser Annealing;Journal of Physics: Conference Series;2006-10-01
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