Explosive crystallization in amorphous Si initiated by long pulse width laser irradiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99519
Reference15 articles.
1. Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
2. Crystallization of amorphous silicon films
3. Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation
4. Nanosecond resolution time-resolved x-ray study of silicon during pulsed-laser irradiation
5. Investigation of the Melting Temperature of Amorphous Silicon
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