Leveling and rebuilding: An approach to improve the uniformity of (In,Ga)As quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1506780
Reference10 articles.
1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
2. Intermixing and shape changes during the formation of InAs self-assembled quantum dots
3. Surface morphology evolution during the overgrowth of large InAs–GaAs quantum dots
4. Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs
5. Narrow Photoluminescence Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
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