Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3549198
Reference15 articles.
1. Ti3SiC2 formed in annealed Al/Ti contacts to p-type SiC
2. Comparison of Pt-Based Ohmic Contacts with Ti–Al Ohmic Contacts forp-Type SiC
3. Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC
4. Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC
5. Growth and Microstructure of Epitaxial Ti3SiC2 Contact Layers on SiC
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