Growth and Microstructure of Epitaxial Ti<SUB>3</SUB>SiC<SUB>2</SUB> Contact Layers on SiC-Reference-Cited by-同舟云学术

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Growth and Microstructure of Epitaxial Ti₃SiC₂ Contact Layers on SiC

Published:2009 Issue:5 Volume:50 Page:1071-1075
ISSN:1345-9678
Container-title:MATERIALS TRANSACTIONS
language:en
Short-container-title:Mater. Trans.

Author:

Tsukimoto Susumu¹,Ito Kazuhiro²,Wang Zhongchang¹,Saito Mitsuhiro¹,Ikuhara Yuichi¹³,Murakami Masanori⁴

Affiliation:

1. World Premier International Research Center, Advanced Institute for Materials Research (WPI-AIMR), Tohoku University

2. Department of Materials Science and Engineering, Kyoto University

3. Institute of Engineering Innovation, The University of Tokyo

4. The Ritsumeikan Trust

Publisher

Japan Institute of Metals

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/matertrans/50/5/50_MC200831/_pdf

Reference22 articles.

1. 1) P. G. Neudeck: J. Electron. Mater. 24 (1995) 283.

2. 2) R. J. Trew: Phys. Status Solidi A 162 (1997) 409.

3. 3) A. Itoh and H. Matsunami: Crit. Rev. Solid State Mater. Sci. 22 (1997) 111–197.

4. 4) R. R. Siergiej, R. C. Clarke, S. Sriram, A. K. Agarwal, R. J. Bojko, A. W. Morse, V. Balakrishna, M. F. MacMillan, A. A. Burk, Jr. and C. D. Brandt: Mater. Sci. Eng. B 61–62 (1999) 9.

5. 5) R. J. Trew, J. B. Yan and P. M. Mock: Proc. IEEE 79 (1991) 598.

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