Arsenic incorporation into InGaAsP grown by low-pressure metalorganic vapor phase epitaxy using tertiarybutylarsine and tertiarybutylphosphine in N[sub 2] ambient
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference23 articles.
1. 8.8 W CW power from broad-waveguide Al-free active-region ( = 805 nm) diode lasers
2. Long-term reliability of Al-free InGaAsP/GaAs (λ=808 nm) lasers at high-power high-temperature operation
3. Non-hydride group V sources for OMVPE
4. Low threshold λ = 1.3 μm multi-quantum well laser diodes grown by metalorganic vapor phase epitaxy using tertiarybutylarsine and tertiarybutylphosphine precursors
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Study of InAs/GaAs quantum dots grown by MOVPE under the safer growth conditions;Journal of Nanoparticle Research;2006-09-23
2. Effects of growth conditions on InAs quantum dot formation by metal-organic chemical vapor deposition using tertiarybutylarsine in pure N2 ambient;Journal of Applied Physics;2006-06-15
3. Aluminum incorporation into AlGaN grown by low-pressure metal organic vapor phase epitaxy;Journal of Applied Physics;2006-05-15
4. MOVPE growth of Al-free 808nm high power lasers using TBP and TBA in pure N2 ambient;Journal of Crystal Growth;2006-02
5. The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy;Journal of Crystal Growth;2004-10
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