8.8 W CW power from broad-waveguide Al-free active-region ( = 805 nm) diode lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19980775?crawler=true&mimetype=application/pdf
Reference10 articles.
1. High-power operation of broad-area laser diodes with GaAs and AlGaAs single quantum wells for Nd:YAG laser pumping
2. Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu m
3. High-power separate-confinement heterostructure AlGaAs/GaAs laser diodes with broadened waveguide
4. Dark-line-resistant, aluminum-free diode laser at 0.8 mu m
5. 6.1 W continuous wave front-facet power from Al-free active-region (λ=805 nm) diode lasers
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