The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Linewidth enhancement factor in 1.3 μm GaAsSb type-II quantum-well lasers
2. 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V
3. Low turn-on voltage GaAs heterojunction bipolar transistors with a pseudomorphic GaAsSb base
4. Study of the compositional control of the antimonide alloys InGaSb and GaAsSb grown by metalorganic molecular beam epitaxy
5. Competition between As and P for incorporation during gas-source molecular beam epitaxy of InGaAsP
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1. Sb dissociative surface coverage model for incorporation of antimony in GaAsSb layers grown on GaAs (0 0 1) substrates;Journal of Crystal Growth;2019-11
2. Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing;Applied Surface Science;2018-11
3. Influence of GaAsSb structural properties on the optical properties of InAs/GaAsSb quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2017-10
4. Improved GaSb-based quantum well laser performance through metamorphic growth on GaAs substrates;Applied Physics Letters;2015-03-09
5. Growth, strain relaxation properties and high-κ dielectric integration of mixed-anion GaAs1-ySby metamorphic materials;Journal of Applied Physics;2014-10-07
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