Improved GaSb-based quantum well laser performance through metamorphic growth on GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4914885
Reference14 articles.
1. Molecular beam epitaxy growth and characterization of thin (<2 mu m) GaSb layers on GaAs(100) substrates
2. Strain relief by periodic misfit arrays for low defect density GaSb on GaAs
3. Metamorphic growth of III-V semiconductor bicrystals
4. Growth of InSb and InAs1−xSbxon GaAs by molecular beam epitaxy
5. Very-Low-Threshold 2.4-<tex>$muhboxm$</tex>GaInAsSb–AlGaAsSb Laser Diodes Operating at Room Temperature in the Continuous-Wave Regime
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3. Design and growth of short-period long wavelength infrared InAsSb/InAsSb superlattices on lattice engineered metamorphic buffers;Journal of Applied Physics;2020-07-28
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