Towards forming-free resistive switching in oxygen engineered HfO2−x-Reference-Cited by-同舟云学术

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Towards forming-free resistive switching in oxygen engineered HfO2−x

Published:2014-02-10 Issue:6 Volume:104 Page:063502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sharath S. U.,Bertaud T.,Kurian J.,Hildebrandt E.,Walczyk C.,Calka P.,Zaumseil P.,Sowinska M.,Walczyk D.,Gloskovskii A.,Schroeder T.,Alff L.

Funder

DFG

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4864653

Reference49 articles.

1. Review and Perspective of Hf-based High-kGate Dielectrics on Silicon

2. Origin of resistivity change in NiO thin films studied by hard x-ray photoelectron spectroscopy

3. Memristive switching mechanism for metal/oxide/metal nanodevices

4. Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells

5. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

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