Breakdown phenomena of Al-based high-k dielectric/SiO2 stack on 4H-SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3151917
Reference13 articles.
1. Silicon Carbide
2. Ultrathin Aluminum Oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Nitric Acid Oxidation
3. Electronic Properties of Atomic-Layer-Deposited Al[sub 2]O[sub 3]/Thermal-Nitrided SiO[sub 2] Stacking Dielectric on 4H SiC
4. Density of defect states of aluminum nitride grown on silicon and silicon carbide substrates at room temperature
5. Characteristics of hydrogenated aluminum nitride films prepared by radio frequency reactive sputtering and their application to surface acoustic wave devices
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1. High-k dielectrics for 4H-silicon carbide: present status and future perspectives;Journal of Materials Chemistry C;2021
2. Influence of annealing environment on the ALD-Al2O3/4H-SiC interface studied through XPS;Journal of Physics D: Applied Physics;2018-02-19
3. Stoichiometry of the ALD-Al2O3/4H–SiC interface by synchrotron-based XPS;Journal of Physics D: Applied Physics;2016-05-26
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