Stoichiometry of the ALD-Al2O3/4H–SiC interface by synchrotron-based XPS-Reference-Cited by-同舟云学术

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Stoichiometry of the ALD-Al2O3/4H–SiC interface by synchrotron-based XPS

Published:2016-05-26 Issue:25 Volume:49 Page:255308
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Usman Muhammad,Suvanam Sethu Saveda,Yazdi Milad Ghadami,Göthelid Mats,Sultan Muhammad,Hallén Anders

Funder

Vetenskapsrådet

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/49/i=25/a=255308/pdf

Reference25 articles.

1. Harsh Environment Silicon Carbide Sensors for Health and Performance Monitoring of Aerospace Systems: A Review

2. Reliability and performance limitations in SiC power devices

3. Radiation-Hard Dielectrics for 4H–SiC: A Comparison Between $\hbox{SiO}_{2}$ and $ \hbox{Al}_{2}\hbox{O}_{3}$

4. Silicon carbide: A unique platform for metal-oxide-semiconductor physics

5. Breakdown phenomena of Al-based high-k dielectric/SiO2 stack on 4H-SiC

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MOS structure with as-deposited ALD Al2O3/4H-SiC heterostructure with high electrical performance: Investigation of the interfacial region;Journal of Vacuum Science & Technology A;2024-08-23

2. Electronic properties of ZrO₂ films fabricated via atomic layer deposition on 4H-SiC and Si substrates;Materials Research Express;2024-01-01

3. Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices;Materials;2022-01-22

4. Pre-deposition growth of interfacial SiO2 layer by low-oxygen-partial-pressure oxidation in the Al2O3/4H-SiC MOS structure;Microelectronic Engineering;2021-05

5. High-k dielectrics for 4H-silicon carbide: present status and future perspectives;Journal of Materials Chemistry C;2021

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