Proximity gettering of Cu at a (110)/(001) grain boundary interface formed by direct silicon bonding-Reference-Cited by-同舟云学术

Proximity gettering of Cu at a (110)/(001) grain boundary interface formed by direct silicon bonding

Published:2009-06 Issue:22 Volume:94 Page:221909
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yu X.,Lu J.,Youssef K.,Rozgonyi G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3151914

Reference15 articles.

1. The Effects of Iron Contamination on Thin Oxide Breakdown -Experimental and Modeling

2. T. E. Seidel, in Materials Issues in Silicon Integrated Circuit Processing, edited by M. Wittmer, J. Stimmell, and M. Strathman (Materials Research Society, Pittsburgh, 1986), p. 3.

3. Precipitation of Oxygen and Intrinsic Gettering in Silicon

4. Mechanism of internal gettering of interstitial impurities in Czochralski-grown silicon

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