Author:
Henley Worth B.,Jastrzebski Lubek,Haddad Nadim F.
Abstract
ABSTRACTThe effect of iron contamination in silicon on the properties of thermally grown thin oxides is studied through electrical modelling and experimental MOSDOT testing. Iron concentration is measured using a surface photovoltage / diffusion length technique. Failure mechanisms related to iron contamination are proposed. Contamination limits for various gate oxide thicknesses are defined. Experimental results show that reduction of oxide thickness from 20nm to lOnm requires a reduction in iron conntamination by 100 times.
Publisher
Springer Science and Business Media LLC
Cited by
16 articles.
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