Spatial variation of activation energy in undoped high-resistivity bulk GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369210
Reference10 articles.
1. Annealing behavior of deep‐level defects in semi‐insulating gallium arsenide studied by photoluminescence, infrared absorption, and resistivity mapping
2. Electrical inhomogeneity in 1" diameter partially dislocation-free undoped LEC GaAs
3. High-resolution resistivity mapping of bulk semi-insulating GaAs by point-contact technique
4. Control of oxygen in undoped liquid encapsulation Czochralski GaAs
5. Negative-U properties of off-centre substitutional oxygen in gallium arsenide
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Estimation of metallic contact effects on the performance of (SI) GaAs soft X-ray radiation detectors;physica status solidi (c);2008-12
2. Parameters of mesoscopic non-uniformities and their influence on the Hall mobility in undoped high-resistivity LEC GaAs;Semiconductor Science and Technology;1999-09-07
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