Negative-U properties of off-centre substitutional oxygen in gallium arsenide
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/6/i=10B/a=023/pdf
Reference23 articles.
1. Pair of local vibration mode absorption bands related to EL2 defects in semi‐insulating GaAs
2. Photosensitivity of the 714 and 730 cm−1absorption bands in semi‐insulating GaAs: Evidence for a deep donor involving oxygen
3. Fine structure of the oxygen‐related local mode at 714 cm−1in GaAs
4. Experimental evidence for a negative-Ucenter in gallium arsenide related to oxygen
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2. Negative signals of photoinduced current transient and thermally stimulated current spectroscopy in GaAs due to negative-U properties of oxygen;Journal of Applied Physics;2008-09-15
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