Fine structure of the oxygen‐related local mode at 714 cm−1in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102269
Reference8 articles.
1. Pair of local vibration mode absorption bands related to EL2 defects in semi‐insulating GaAs
2. Model study of the local vibration center related to EL2 levels in GaAs
3. Assessment of oxygen in gallium arsenide by infrared local vibrational mode spectroscopy
4. Photosensitivity of the 714 and 730 cm−1absorption bands in semi‐insulating GaAs: Evidence for a deep donor involving oxygen
5. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-ACenter
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4. Assignment of Fermi-level pinning and optical transitions to the (AsGa)2-OAs center in oxygen-doped GaAs;Applied Physics Letters;2013-09-30
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