Annealing behavior of deep‐level defects in semi‐insulating gallium arsenide studied by photoluminescence, infrared absorption, and resistivity mapping
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348405
Reference17 articles.
1. Correlations of photoluminescence with defect densities in semi-insulating gallium arsenide
2. Direct and fast comparison of near-infrared absorption and photoluminescence topography of semiinsulating GaAs wafers
3. Characterization of semi‐insulating GaAs wafers by room‐temperature EL2‐related photoluminescence
4. Compensation mechanisms in GaAs
5. Optical assessment of the main electron trap in bulk semi‐insulating GaAs
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