Localization crossover and phase coherent electron transport in a-InGaZnO4 thin films
Author:
Affiliation:
1. Department of Physics, Nano Functional Materials Technology Centre, Indian Institute of Technology Madras, Chennai 600036, India
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4978530
Reference31 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
3. Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors
4. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper
5. Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
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