Differential conductance fluctuations in silicon nanowire transistors caused by quasiballistic transport and scattering induced intersubband transitions-Reference-Cited by-同舟云学术

Differential conductance fluctuations in silicon nanowire transistors caused by quasiballistic transport and scattering induced intersubband transitions

Published:2008-02-25 Issue:8 Volume:92 Page:082103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jin Seonghoon,Fischetti Massimo V.,Tang Ting-wei

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2888963

Reference7 articles.

1. High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

2. A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions

3. Simulation of Silicon Nanowire Transistors Using Boltzmann Transport Equation Under Relaxation Time Approximation

4. Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity

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