Negative transconductance in double-gate germanium-on-insulator field effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2802074
Reference17 articles.
1. Frontiers of silicon-on-insulator
2. An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode
3. Mobility comparison between front and back channels in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors by the front-gate split capacitance-voltage method
4. Velocity-Modulation Transistor (VMT) -- A New Field-Effect Transistor Concept
5. Fabrication and operation of a velocity modulation transistor
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