Origin of low-temperature negative transconductance in multilayer MoS2 transistors-Reference-Cited by-同舟云学术

Origin of low-temperature negative transconductance in multilayer MoS2 transistors

Published:2021-07-26 Issue:4 Volume:119 Page:043502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Qi¹,Li Guoli¹^ORCID,Liu Yuan¹^ORCID,André Nicolas²^ORCID,Liu Xingqiang¹^ORCID,Xia Zhen¹,Flandre Denis¹²^ORCID,Liao Lei¹^ORCID

Affiliation:

1. Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China

2. Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Université catholique de Louvain, Louvain-la-Neuve 1348, Belgium

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0058545

Reference40 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Single-layer MoS2 transistors

5. Emerging Photoluminescence in Monolayer MoS2

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