Lattice matching at elevated substrate temperature for growth of GaAs films with good electrical properties on CaxSr1−xF2/GaAs(100) structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96475
Reference8 articles.
1. Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy
2. Growth of semiconductor/insulator structures: GaAs/fluoride/GaAs (001)
3. GaAs/(Ca,Sr)F2/(001) GaAs lattice‐matched structures grown by molecular beam epitaxy
4. Epitaxial relations in CaxSr1−xF2films grown on GaAs {111} and Ge(111) substrates
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1. Strain Relief in SrF2 Epitaxial Films on Si(111) Substrates;MRS Proceedings;1992
2. Crystallinity of heteroepitaxial GaAs layers grown on (Ca, Sr)F2/CaF2/Si(100) structures by molecular beam epitaxy;Journal of Crystal Growth;1991-11
3. Fluoride/semiconductor and semiconductor/fluoride/semiconductor heteroepitaxial structure research: A review;Thin Solid Films;1990-06
4. Influence of off‐oriented substrates on the crystallinity of (Ca,Sr)F2layers grown on Si (100);Applied Physics Letters;1990-05-28
5. Structural properties of (100) BaF2on (100) InP grown byinsiturapid isothermal processing;Journal of Applied Physics;1990-05-15
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