Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94428
Reference8 articles.
1. Zone‐melting recrystallization of encapsulated silicon films on SiO2—morphology and crystallography
2. Vapor Phase Epitaxial Growth of MgO · Al2 O 3
3. Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si
4. Epitaxial growth of elemental semiconductor films onto silicide/Si and fluoride/Si structures
5. Lateral growth of single-crystal InP over dielectric films by orientation-dependent VPE
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1. Growth of InP Islands on LaF 3/InP(111)B Heterostructures by Molecular Beam Epitaxy;Japanese Journal of Applied Physics;1999-02-15
2. Surface free energy modification of CaF2 by atomic-height island formation on heteroepitaxy of GaAs on CaF2;Applied Surface Science;1998-06
3. Heteroepitaxy of GaAs on CaF2/Si(111) By Surface Free Energy Modulation Method;MRS Proceedings;1998
4. Photoelectron diffraction studies on the structure of sulfur-passivated InP(100) and CaF2 layers grown on S/InP(100);Surface Science;1997-06
5. Observations of GaAs/CaF2 heterointerface formation by electron beam surface modification and its effects;Applied Surface Science;1997-06
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