Dielectric breakdown in thin Si oxynitride films produced by rapid thermal processing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103234
Reference17 articles.
1. On physical models for gate oxide breakdown
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4. Charge trapping and breakdown in thin SiO2 polysilicon-gate MOS capacitors
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1. Breakdown and generation of interface states in oxynitride thin films on silicon;Semiconductor Science and Technology;2002-01-11
2. Comparison of the Dynamic Stress Breakdown between Oxide and Oxy-Nitride Thin Films on Silicon;physica status solidi (a);2000-12
3. Ar/N[sub 2]O remote plasma-assisted oxidation of Si(100): Plasma chemistry, growth kinetics, and interfacial reactions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
4. Chapter 1 Silica, silicon nitride and oxynitride thin films;New Insulators, Devices and Radiation Effects;1999
5. Ultrathin silicon oxynitride films grown by Ar/N2O remote plasma processing;Journal of Applied Physics;1998-06-15
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