Dislocation climb model in compound semiconductors with zinc blende structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89145
Reference8 articles.
1. On the Efficiency of Dislocation Climb in Gold
2. Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasers
3. Defect structure of degraded heterojunction GaAlAs−GaAs lasers
4. Defect structure induced during forward‐bias degradation of GaP green‐light‐emitting diodes
5. Observation of Recombination-Enhanced Defect Reactions in Semiconductors
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