Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures-Reference-Cited by-同舟云学术

Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures

Published:2015-04-21 Issue:15 Volume:117 Page:155701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wu F.¹,Gao K. H.¹^ORCID,Li Z. Q.¹^ORCID,Lin T.²^ORCID,Zhou W. Z.³

Affiliation:

1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, Tianjin University, Tianjin 300072, China

2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China

3. Physical Science and Technology College, Guangxi University, Nanning, Guangxi 530004, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4918536

Reference33 articles.

1. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

2. High Al-content AlGaN/GaN MODFETs for ultrahigh performance

3. Power electronics on InAlN/(In)GaN: Prospect for a record performance

4. High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors

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