Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1877816
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1. Optical investigations and strain effect in AlGaN/GaN epitaxial layers;Journal of Physics: Conference Series;2017-06
2. Influence of AlN thickness on AlGaN epilayer grown by MOCVD;Superlattices and Microstructures;2016-10
3. Enhanced carrier localization in near-ultraviolet multiple quantum wells using quaternary AlInGaN as the well layers;RSC Advances;2015
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5. Optical characterization of quaternary AlInGaN epilayer and multiple quantum wells grown by a pulsed metalorganic chemical vapor deposition;Current Applied Physics;2011-03
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