Raman investigation of strain in Si∕SiGe heterostructures: Precise determination of the strain-shift coefficient of Si bands
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2178396
Reference32 articles.
1. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
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3. Fabrication of relaxed Si1−xGex layers on Si substrates by rapid thermal chemical vapor deposition
4. Line, point and surface defect morphology of graded, relaxed GeSi alloys on Si substrates
5. Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices
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