Superior carrier confinement in InAlN/InGaN/AlGaN double heterostructures grown by metal-organic chemical vapor deposition
Author:
Affiliation:
1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China
Funder
Fundamental Research Fund for the Central Universities of China
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4903293
Reference19 articles.
1. Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices
2. InAlN/GaN HEMTs With AlGaN Back Barriers
3. AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement
4. 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier
5. InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition
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