Reduced temperature dependence of threshold of (Al,Ga)As lasers grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92240
Reference22 articles.
1. Temperature dependence of emission efficiency and lasing threshold in laser diodes
2. Thermal properties of semiconductor lasers, and the interpretation of thermal-resistance measurements
3. GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers
4. Reliability of DH GaAs lasers at elevated temperatures
5. Accelerated aging and a uniform mode of degradation in (Al,Ga)As double‐heterostructure lasers
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Implementation of the Proposed Reliability Assurance Strategy for an InGaAsP/InP, Planar Mesa, Buried Heterostructure Laser Operating at 1.3 μm for Use in a Submarine Cable;AT&T Technical Journal;1985-03
2. Chapter 2 Molecular Beam Epitaxy for III–V Compound Semiconductors;Semiconductors and Semimetals;1985
3. Heterostructure semiconductor lasers prepared by molecular beam epitaxy;IEEE Journal of Quantum Electronics;1984-10
4. Reduced threshold current temperature dependence in double heterostructure lasers due to separate p-n and heterojunctions;IEEE Journal of Quantum Electronics;1983-06
5. Temperature and excitation dependences of active layer photoluminescence in (Al,Ga)As laser heterostructures;Journal of Applied Physics;1983-05
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