Temperature and excitation dependences of active layer photoluminescence in (Al,Ga)As laser heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332336
Reference26 articles.
1. Reduced temperature dependence of threshold of (Al,Ga)As lasers grown by molecular beam epitaxy
2. Temperature dependence of emission efficiency and lasing threshold in laser diodes
3. Thermal properties of semiconductor lasers, and the interpretation of thermal-resistance measurements
4. GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers
5. Reliability of DH GaAs lasers at elevated temperatures
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1. Influence of Zn doping profiles on excitation dependence of photoluminescence intensity in InGaAsP heterostructures;Electronics Letters;2005
2. Design and fabrication of low-threshold 1.55-μm graded-index separate-confinement heterostructure strained InGaAsP single-quantum-well laser diodes;IEEE Journal of Quantum Electronics;1997-07
3. High temperature optical properties of GaAs/AlGaAs double heterostructures;Semiconductor Science and Technology;1995-06-01
4. Analysis of frequency characteristics of AlGaAs double heterostructure LEDS with a small energy-gap difference at the p-n junction;Semiconductor Science and Technology;1993-09-01
5. Enhancement of photoluminescence fromDXcenters in AlGaAs heterostructures;Applied Physics Letters;1993-04-19
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