Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality-Reference-Cited by-同舟云学术

Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality

Published:2019-02 Issue:2 Volume:7 Page:022516
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Kneiß M.¹^ORCID,Hassa A.¹^ORCID,Splith D.¹^ORCID,Sturm C.¹,von Wenckstern H.¹^ORCID,Schultz T.²^ORCID,Koch N.²^ORCID,Lorenz M.¹^ORCID,Grundmann M.¹^ORCID

Affiliation:

1. Felix Bloch Institute for Solid State Physics, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany

2. Humboldt Universität zu Berlin, Institut für Physik, Brook-Taylor-Straße 6, 12489 Berlin, Germany

Funder

Deutsche Forschungsgemeinschaft

European Social Fund

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5054378

Reference52 articles.

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2. Group-III Sesquioxides: Growth, Physical Properties and Devices

3. A review of Ga2O3materials, processing, and devices

4. Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

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