Photoluminescence of lattice‐matched In1−xGaxP1−yAsylayers on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92058
Reference11 articles.
1. Bandgap and lattice constant of GaInAsP as a function of alloy composition
2. Limitations of the direct‐indirect transition on In1−xGaxP1−zAszheterojunctions
3. Yellow—Green In1-xGaxP and In1-xGaxP1-zAszLED's and electron-beam-pumped lasers prepared by LPE and VPE
4. Growth of In[sub (1−x)]Ga[sub x]P p-n Junctions by Liquid Phase Epitaxy
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1. Zn diffusion of In0.5Ga0.5P investigated by photoluminescence measurements;Thin Solid Films;1997-05
2. Spinodal-like decomposition of grown by gas source molecular beam epitaxy;Journal of Crystal Growth;1995-10
3. Gas‐source molecular beam epitaxy growth of GaxIn1−xAsyP1−ylattice matched to GaAs;Applied Physics Letters;1993-08-23
4. Growth and photoluminescence of GaSb andGa1−xInxAsySb1−ygrown on GaSb substrates by liquid-phase electroepitaxy;Physical Review B;1993-01-15
5. Growth of In0.5Ga0.5P on GaAs by LPE: The influence of Growth Temperature and Lattice Mismatch on Photoluminescence;Japanese Journal of Applied Physics;1988-07-20
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