Yellow—Green In1-xGaxP and In1-xGaxP1-zAszLED's and electron-beam-pumped lasers prepared by LPE and VPE-Reference-Cited by-同舟云学术

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Yellow—Green In1-xGaxP and In1-xGaxP1-zAszLED's and electron-beam-pumped lasers prepared by LPE and VPE

Published:1979-08 Issue:8 Volume:26 Page:1190-1193
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ermakov O.N.,Garba L.S.,Golovanov Y.A.,Sushkov V.P.,Chukichev M.V.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31792/01480153.pdf?arnumber=1480153

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radial Nanowire Light-Emitting Diodes in the (AlxGa1–x)yIn1–yP Material System;Nano Letters;2015-12-31

2. Doping effect on the intermixing in GaInAsP/InP multiple quantum well structures grown using all solid sources;Journal of Crystal Growth;2004-08

3. Analysis of physical and technological aspects of monolithic optoelectronic devices for on-board systems of remote sounding: II. Experimental investigation;SPIE Proceedings;2003-09-30

4. Strained GaInAsP/InP multiple quantum well structures grown by solid source molecular beam epitaxy;Journal of Crystal Growth;2002-11

5. Characterization of GaInAsP/InP multiple quantum wells grown by solid source MBE for long wavelength infrared detection;SPIE Proceedings;2002-09-18

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