Densification of a-IGZO with low-temperature annealing for flexible electronics applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4973629
Reference45 articles.
1. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
3. Electronic Structures and Device Applications of Transparent Oxide Semiconductors: What Is the Real Merit of Oxide Semiconductors?
4. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
5. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
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1. Analysis of Channel-Length Dependence of Residual Hydrogen Diffusion From the Gate Insulator During Oxygen Annealing Treatment in IGZO TFTs;IEEE Electron Device Letters;2024-09
2. Optimizing the Performance of the Atomic-Layer-Deposited Zinc–Tin-Oxide Thin Film Transistor by Ozone Treatment and Thermal Annealing;ACS Applied Electronic Materials;2024-07-31
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4. High-Stability IWO Thin-Film Transistors Under Microwave Annealing for Low Thermal Budget Application;IEEE Transactions on Nanotechnology;2024
5. A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits;IEEE Transactions on Electron Devices;2023-09
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