Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence-Reference-Cited by-同舟云学术

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Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence

Published:2016-04-21 Issue:15 Volume:119 Page:155705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jiao C.¹,Ahyi A. C.¹^ORCID,Xu C.²,Morisette D.³^ORCID,Feldman L. C.²,Dhar S.¹

Affiliation:

1. Department of Physics, Auburn University, Auburn, Alabama 36849, USA

2. Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854, USA

3. Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA

Funder

National Science Foundation (NSF)

U.S. Army Research Laboratory (ARL)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/jap/119/15/1.4947117.pdf?itemId=/content/aip/journal/jap/119/15/10.1063/1.4947117&mimeType=pdf&containerItemId=content/aip/journal/jap

Reference34 articles.

1. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

2. Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation

3. Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

4. Kinetics of NO nitridation in SiO2/4H–SiC

5. Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carrier Trap Density Reduction at SiO2/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres;Materials;2023-06-14

2. Bias temperature instability in SiC metal oxide semiconductor devices;Journal of Physics D: Applied Physics;2021-01-19

3. Defects and Passivation Mechanism of the Suboxide Layers at SiO₂/4H-SiC (0001) Interface: A First-Principles Calculation;IEEE Transactions on Electron Devices;2021-01

4. 4H-SiC Power VDMOSFET Manufacturing Utilizing POCl₃ Post Oxidation Annealing;Materials Science Forum;2020-07

5. Surface Treatment of 4H-SiC MOSFETs Prior to Al₂O₃ Deposition;Materials Science Forum;2020-07

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