Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4767905
Reference25 articles.
1. A new semiconductor superlattice
2. Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices
3. Effect of contact doping in superlattice-based minority carrier unipolar detectors
4. High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices
5. Growth and Characterization of Long-Wavelength Infrared Type-II Superlattice Photodiodes on a 3-in GaSb Wafer
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1. Quasi-3-dimensional simulations and experimental validation of surface leakage currents in high operating temperature type-II superlattice infrared detectors;Journal of Applied Physics;2022-11-28
2. Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform;Scientific Reports;2022-07-08
3. Epitaxial mid-IR nanophotonic optoelectronics;Applied Physics Letters;2022-05-30
4. Wet etching and passivation of GaSb-based very long wavelength infrared detectors;Chinese Physics B;2022-05-01
5. Al0.3InAsSb/Al0.7InAsSb Digital Alloy nBn Photodetectors;Journal of Lightwave Technology;2022-01
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