Determination of group velocity based on nanoindentation using Si and SiO2/Si wafers-Reference-Cited by-同舟云学术

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Determination of group velocity based on nanoindentation using Si and SiO2/Si wafers

Published:2021-07-01 Issue:7 Volume:11 Page:075216
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Norimasa Oga¹,Hase Masataka¹,Mori Ryotaro¹,Hayamizu Mai²,Murotani Hiroshi²,Miyazaki Koji³^ORCID,Takashiri Masayuki¹^ORCID

Affiliation:

1. Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan

2. Department of Electro-Photo-Optics Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan

3. Department of Mechanical and Control Engineering, Kyushu Institute of Technology, 1-1 Sensui, Tobata-ku, Kitakyushu, Fukuoka 804-8550, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0055581

Reference40 articles.

1. Lattice Thermal Conductivity of Disordered Semiconductor Alloys at High Temperatures

2. Frequency dependence of the thermal conductivity of semiconductor alloys

3. Lattice thermal conductivity of group-IV and III–V semiconductor alloys

4. An assessment of wide bandgap semiconductors for power devices

5. Experimental observation of high thermal conductivity in boron arsenide

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultralow thermal conductivity of amorphous silicon–germanium thin films for alloy and disorder scattering determined by 3ω method and nanoindentation;Applied Physics Express;2024-01-01

2. Heat transport evaluation of amorphous Si, SiGe, and Ge thin films using 3ω method and minimum heat conduction model;Journal of Advanced Science;2024

3. Origin of ultralow thermal conductivity in amorphous Si thin films investigated using nanoindentation, 3ω method, and phonon transport analysis;Applied Physics Express;2023-12-26

4. Determination of Seebeck coefficient originating from phonon-drag effect using Si single crystals at different carrier densities;Scientific Reports;2023-08-18

5. Experimental study on the effect of impurity concentration on phonon and electronic transport properties of single-crystal silicon;Results in Physics;2023-04

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