Determination of Seebeck coefficient originating from phonon-drag effect using Si single crystals at different carrier densities

Abstract

AbstractThe phonon-drag effect is useful for improving the thermoelectric performance, especially the Seebeck coefficient. Therefore, the phonon and electron transport properties of Si single crystals at different carrier densities were investigated, and the relationship between these properties and the phonon-drag effect was clarified. Phonon transport properties were determined using nanoindentation and spot-periodic heating radiation thermometry. The electron transport properties were determined based on the electrical conductivity of Si. The diffusive Seebeck coefficient derived from the electron transport properties was in good agreement with previous reports. However, the value of the phonon-drag Seebeck coefficient derived from the phonon transport properties is very low. This phenomenon suggests that phonons with a normal mean free path (MFP) do not contribute to the increase in the Seebeck coefficient; however, phonons with a long MFP and low frequency increase the Seebeck coefficient via the phonon-drag effect. Moreover, the phonon-drag effect was sufficiently pronounced even at 300 K and in the heavily doped region. These features are key in designing thermoelectric materials with enhanced performance derived from the phonon-drag effect.