Experimental study on the effect of impurity concentration on phonon and electronic transport properties of single-crystal silicon
Author:
Funder
Japan Society for the Promotion of Science
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference42 articles.
1. Phonon engineering through crystal chemistry;Toberer;J Mater Chem,2011
2. Phonon engineering in carbon nanotubes by controlling defect concentration;Sevik;Nano Lett,2011
3. Thermal phonon engineering by tailored nanostructures;Nomura;Jpn J Appl Phys,2018
4. Phonon engineering for thermoelectric enhancement of p-type bismuth telluride by a hot-pressing texture method;Wang;ACS Appl Mater Interfaces,2020
5. Phonon engineering in nanostructures for solid-state energy conversion;Chen;Mater Sci Eng, A,2000
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