Determination of theD 0/−level in amorphous Si,Ge:H(F) by time‐of‐flight charge collection
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99950
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1. Trapping parameters of dangling bonds in hydrogenated amorphous silicon
2. Transient photoconductivity studies of the light soaked state of hydrogenated amorphous silicon
3. Zum Mechanismus des lichtelektrischen Prim�rstromes in isolierenden Kristallen
4. Study of gap states in a-SiGe:H alloy system by below-gap modulated photocurrent spectroscopy
5. Steady state and transient transport in a-Si, Ge : H, F alloys
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1. Dispersive Transient Photocurrent in Amorphous Silicon at High and Low Trap-State Occupations;The Journal of Physical Chemistry B;2000-03-29
2. Transient photocurrent in hydrogenated amorphous silicon and implications for photodetector devices;Journal of Applied Physics;1996
3. Numerical modeling of the dependence of the steady‐state photoconductivity in hydrogenated amorphous silicon on the rate of carrier generation;Journal of Applied Physics;1995-07
4. Carrier lifetime in amorphous semiconductors;Journal of Applied Physics;1994-06
5. Transient photocharge measurements and electron emission from deep levels in undopeda-Si:H;Physical Review B;1992-10-15
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