Numerical modeling of the dependence of the steady‐state photoconductivity in hydrogenated amorphous silicon on the rate of carrier generation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360670
Reference11 articles.
1. Nonequilibrium Steady-State Statistics and Associated Effects for Insulators and Semiconductors Containing an Arbitrary Distribution of Traps
2. The Photoconductivity Exponent For Recombination At Dangling Bonds In a-Si:H
3. Thermal activation energy of steady-state photoconductivity in undoped amorphous silicon and silicon-germanium alloys
4. Density of the gap states in undoped and doped glow discharge a-Si:H
5. Analysis of dispersive transport in amorphous semiconductors by discretization of a continuous distribution of localized states
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1. Determination of semiconductor band gap state parameters from photoconductivity measurements. I. Theoretical developments;Physical Review B;2006-06-09
2. Determination of the density of states of semiconductors from steady-state photoconductivity measurements;Journal of Non-Crystalline Solids;2006-06
3. Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors;Thin Solid Films;2005-12
4. Characterization of high rate a-SiGe:H thin films fabricated by 55kHz PECVD;Physica B: Condensed Matter;2003-01
5. Time evolution of the density of states of tritiated hydrogenated amorphous silicon;Philosophical Magazine B;2000-04
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